STMicroelectronics - STB180N55F3

KEY Part #: K6402052

STB180N55F3 Pricing (USD) [24581PC Stock]

  • 1 pcs$1.67661
  • 1,000 pcs$1.60372

Nimewo Pati:
STB180N55F3
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 55V 120A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in STMicroelectronics STB180N55F3 electronic components. STB180N55F3 can be shipped within 24 hours after order. If you have any demands for STB180N55F3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STB180N55F3 Atribi pwodwi yo

Nimewo Pati : STB180N55F3
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 55V 120A D2PAK
Seri : STripFET™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3.5 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6800pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 330W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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