SP8M70TB1 Pricing (USD) [121455PC Stock]
- 1 pcs$0.32464
- 2,500 pcs$0.32302
- Nimewo Pati:
- SP8M70TB1
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N/P-CH 250V 3A/2.5A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - JFETs and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor SP8M70TB1 electronic components. SP8M70TB1 can be shipped within 24 hours after order. If you have any demands for SP8M70TB1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SP8M70TB1 Atribi pwodwi yo
Nimewo Pati :
SP8M70TB1
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N/P-CH 250V 3A/2.5A 8SOIC
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A, 2.5A
RD sou (Max) @ Id, Vgs :
1.63 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
5.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
180pF @ 25V
Pouvwa - Max :
650mW
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOP
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