Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N/P-CH 250V 3A/2.5A 8SOIC
Estati Pati :
Not For New Designs
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A, 2.5A
RD sou (Max) @ Id, Vgs :
1.63 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
5.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
180pF @ 25V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOP