IRF7910TRPBF Pricing (USD) [139505PC Stock]
- 1 pcs$0.26514
- 4,000 pcs$0.22657
- Nimewo Pati:
- IRF7910TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 12V 10A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7910TRPBF electronic components. IRF7910TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7910TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7910TRPBF Atribi pwodwi yo
Nimewo Pati :
IRF7910TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 12V 10A 8SOIC
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A
RD sou (Max) @ Id, Vgs :
15 mOhm @ 8A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
26nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1730pF @ 6V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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