Vishay Siliconix - SI7946ADP-T1-GE3

KEY Part #: K6525128

SI7946ADP-T1-GE3 Pricing (USD) [80830PC Stock]

  • 1 pcs$0.48374

Nimewo Pati:
SI7946ADP-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2 N-CH 150V POWERPAK SO8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI7946ADP-T1-GE3 electronic components. SI7946ADP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7946ADP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7946ADP-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI7946ADP-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2 N-CH 150V POWERPAK SO8
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.7A (Tc)
RD sou (Max) @ Id, Vgs : 186 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 6.5nC @ 7.5V
Antre kapasite (Ciss) (Max) @ Vds : 230pF @ 75V
Pouvwa - Max : 19.8W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® SO-8 Dual
Pake Aparèy Founisè : PowerPAK® SO-8 Dual