Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
MOSFET 4N-CH 500V 31A MTP
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
31A
RD sou (Max) @ Id, Vgs :
220 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id :
6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
160nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
7210pF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
16-MTP Module
Pake Aparèy Founisè :
16-MTP