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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDA20N50F

ON Semiconductor - FDA20N50F

KEY Part #: K6400946

FDA20N50F Pricing (USD) [18408PC Stock]

  • 1 pcs$2.36215
  • 10 pcs$2.10743
  • 100 pcs$1.72798
  • 500 pcs$1.39924
  • 1,000 pcs$1.18008
Nimewo Pati:
FDA20N50F
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 500V 22A TO-3PN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDA20N50F electronic components. FDA20N50F can be shipped within 24 hours after order. If you have any demands for FDA20N50F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDA20N50F Atribi pwodwi yo

Nimewo Pati : FDA20N50F
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 500V 22A TO-3PN
Seri : UniFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 260 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 65nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3390pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 388W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3PN
Pake / Ka : TO-3P-3, SC-65-3

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