FDN5632N-F085 Pricing (USD) [559705PC Stock]
- 1 pcs$0.06608
- Nimewo Pati:
- FDN5632N-F085
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 60V 1.7A SSOT3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Transistors - JFETs and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDN5632N-F085 electronic components. FDN5632N-F085 can be shipped within 24 hours after order. If you have any demands for FDN5632N-F085, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDN5632N-F085 Atribi pwodwi yo
Nimewo Pati :
FDN5632N-F085
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 60V 1.7A SSOT3
Seri :
Automotive, AEC-Q101, PowerTrench®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
82 mOhm @ 1.7A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
475pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SuperSOT-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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