Deskripsyon :
GAN TRANS SYMMETRICAL HALF BRIDG
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
23A
RD sou (Max) @ Id, Vgs :
4.4 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 7mA
Chaje Gate (Qg) (Max) @ Vgs :
6.8nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
830pF @ 30V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die