[3711PC Stock]
- Nimewo Pati:
- PMGD8000LN,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 0.125A 6TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMGD8000LN,115 electronic components. PMGD8000LN,115 can be shipped within 24 hours after order. If you have any demands for PMGD8000LN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMGD8000LN,115 Atribi pwodwi yo
Nimewo Pati :
PMGD8000LN,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET 2N-CH 30V 0.125A 6TSSOP
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
125mA
RD sou (Max) @ Id, Vgs :
8 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id :
1.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
0.35nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
18.5pF @ 5V
Pouvwa - Max :
200mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
6-TSSOP
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