Infineon Technologies - IRFH5207TRPBF

KEY Part #: K6406536

[1285PC Stock]


    Nimewo Pati:
    IRFH5207TRPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 75V 13A 8-PQFN.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays and Tiristors - SCR - Modil yo ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRFH5207TRPBF electronic components. IRFH5207TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH5207TRPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFH5207TRPBF Atribi pwodwi yo

    Nimewo Pati : IRFH5207TRPBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 75V 13A 8-PQFN
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 75V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A (Ta), 71A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 9.6 mOhm @ 43A, 10V
    Vgs (th) (Max) @ Id : 4V @ 100µA
    Chaje Gate (Qg) (Max) @ Vgs : 59nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2474pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 3.6W (Ta), 105W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-PQFN (5x6)
    Pake / Ka : 8-PowerVDFN