NVC3S5A51PLZT1G Pricing (USD) [371572PC Stock]
- 1 pcs$0.09954
- 3,000 pcs$0.09652
- Nimewo Pati:
- NVC3S5A51PLZT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CHANNEL 60V 1.8A 3-CPH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NVC3S5A51PLZT1G electronic components. NVC3S5A51PLZT1G can be shipped within 24 hours after order. If you have any demands for NVC3S5A51PLZT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVC3S5A51PLZT1G Atribi pwodwi yo
Nimewo Pati :
NVC3S5A51PLZT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CHANNEL 60V 1.8A 3-CPH
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
250 mOhm @ 1A, 10V
Vgs (th) (Max) @ Id :
2.6V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
6nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
262pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.2W (Ta)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
3-CPH
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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