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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NVC3S5A51PLZT1G

ON Semiconductor - NVC3S5A51PLZT1G

KEY Part #: K6416237

NVC3S5A51PLZT1G Pricing (USD) [371572PC Stock]

  • 1 pcs$0.09954
  • 3,000 pcs$0.09652
Nimewo Pati:
NVC3S5A51PLZT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CHANNEL 60V 1.8A 3-CPH.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Diodes - RF, Transistors - FETs, MOSFETs - Single and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVC3S5A51PLZT1G electronic components. NVC3S5A51PLZT1G can be shipped within 24 hours after order. If you have any demands for NVC3S5A51PLZT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVC3S5A51PLZT1G Atribi pwodwi yo

Nimewo Pati : NVC3S5A51PLZT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CHANNEL 60V 1.8A 3-CPH
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs (th) (Max) @ Id : 2.6V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 6nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 262pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.2W (Ta)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 3-CPH
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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