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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT40SM120S

Microsemi Corporation - APT40SM120S

KEY Part #: K6402718

APT40SM120S Pricing (USD) [2607PC Stock]

  • 1 pcs$13.88047
  • 10 pcs$12.83851
  • 25 pcs$11.79729
  • 100 pcs$10.96460
Nimewo Pati:
APT40SM120S
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 1200V 41A D3PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - JFETs, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT40SM120S electronic components. APT40SM120S can be shipped within 24 hours after order. If you have any demands for APT40SM120S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT40SM120S Atribi pwodwi yo

Nimewo Pati : APT40SM120S
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 1200V 41A D3PAK
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 41A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 20V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 20A, 20V
Vgs (th) (Max) @ Id : 3V @ 1mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs : 130nC @ 20V
Vgs (Max) : +25V, -10V
Antre kapasite (Ciss) (Max) @ Vds : 2560pF @ 1000V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 273W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D3Pak
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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