Nimewo Pati :
C3M0065100J-TR
Manifakti :
Cree/Wolfspeed
Deskripsyon :
1000V 65 MOHM G3 SIC MOSFET
Teknoloji :
SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
35A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
15V
RD sou (Max) @ Id, Vgs :
78 mOhm @ 20A, 15V
Vgs (th) (Max) @ Id :
3.5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds :
660pF @ 600V
Disipasyon Pouvwa (Max) :
113.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263-7
Pake / Ka :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA