Nimewo Pati :
APTSM120AM55CT1AG
Manifakti :
Microsemi Corporation
Deskripsyon :
POWER MODULE - SIC
FET Kalite :
2 N-Channel (Dual), Schottky
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
74A (Tc)
RD sou (Max) @ Id, Vgs :
50 mOhm @ 40A, 20V
Vgs (th) (Max) @ Id :
3V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs :
272nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
5120pF @ 1000V
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP1