PSMN1R6-40YLC:115 Pricing (USD) [2634PC Stock]
- 1,500 pcs$0.34714
- Nimewo Pati:
- PSMN1R6-40YLC:115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 40V 100A POWERSO8-4.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - RF, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PSMN1R6-40YLC:115 electronic components. PSMN1R6-40YLC:115 can be shipped within 24 hours after order. If you have any demands for PSMN1R6-40YLC:115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN1R6-40YLC:115 Atribi pwodwi yo
Nimewo Pati :
PSMN1R6-40YLC:115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 40V 100A POWERSO8-4
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.55 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
1.95V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
126nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7790pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
288W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LFPAK56, Power-SO8
Pake / Ka :
SOT-1023, 4-LFPAK
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