[1608PC Stock]
- Nimewo Pati:
- NP23N06YDG-E1-AY
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 60V 23A 8HSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America NP23N06YDG-E1-AY electronic components. NP23N06YDG-E1-AY can be shipped within 24 hours after order. If you have any demands for NP23N06YDG-E1-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NP23N06YDG-E1-AY Atribi pwodwi yo
Nimewo Pati :
NP23N06YDG-E1-AY
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 60V 23A 8HSON
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
23A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
27 mOhm @ 11.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta), 60W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-HSON
Pake / Ka :
8-SMD, Flat Lead Exposed Pad
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