APT8024B2LLG Pricing (USD) [3649PC Stock]
- 1 pcs$13.05579
- Nimewo Pati:
- APT8024B2LLG
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET N-CH 800V 31A T-MAX.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Diodes - RF, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT8024B2LLG electronic components. APT8024B2LLG can be shipped within 24 hours after order. If you have any demands for APT8024B2LLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT8024B2LLG Atribi pwodwi yo
Nimewo Pati :
APT8024B2LLG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET N-CH 800V 31A T-MAX
Seri :
POWER MOS 7®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
31A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
240 mOhm @ 15.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
160nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
4670pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
565W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
T-MAX™ [B2]
Pake / Ka :
TO-247-3 Variant
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