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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. XP161A11A1PR-G

Torex Semiconductor Ltd - XP161A11A1PR-G

KEY Part #: K6393183

XP161A11A1PR-G Pricing (USD) [274416PC Stock]

  • 1 pcs$0.14901
  • 1,000 pcs$0.14827
Nimewo Pati:
XP161A11A1PR-G
Manifakti:
Torex Semiconductor Ltd
Detaye deskripsyon:
MOSFET N-CH 30V 4A SOT89.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Torex Semiconductor Ltd XP161A11A1PR-G electronic components. XP161A11A1PR-G can be shipped within 24 hours after order. If you have any demands for XP161A11A1PR-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

XP161A11A1PR-G Atribi pwodwi yo

Nimewo Pati : XP161A11A1PR-G
Manifakti : Torex Semiconductor Ltd
Deskripsyon : MOSFET N-CH 30V 4A SOT89
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 65 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 270pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-89
Pake / Ka : TO-243AA

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