ZXMN2F30FHQTA Pricing (USD) [663036PC Stock]
- 1 pcs$0.05579
- 3,000 pcs$0.05025
- Nimewo Pati:
- ZXMN2F30FHQTA
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 20V 4.9A SOT23-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMN2F30FHQTA electronic components. ZXMN2F30FHQTA can be shipped within 24 hours after order. If you have any demands for ZXMN2F30FHQTA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN2F30FHQTA Atribi pwodwi yo
Nimewo Pati :
ZXMN2F30FHQTA
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 20V 4.9A SOT23-3
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.8nC @ 10V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
452pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.4W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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