[8461PC Stock]
- Nimewo Pati:
- IRFL4310PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 1.6A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Tiristors - TRIACs, Diodes - Zener - Single, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - JFETs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFL4310PBF electronic components. IRFL4310PBF can be shipped within 24 hours after order. If you have any demands for IRFL4310PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFL4310PBF Atribi pwodwi yo
Nimewo Pati :
IRFL4310PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 1.6A SOT223
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
200 mOhm @ 1.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
330pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA
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