Nimewo Pati :
PMCXB1000UEZ
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N/P-CH 30V DFN1010B-6
FET Kalite :
N and P-Channel Complementary
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
590mA (Ta), 410mA (Ta)
RD sou (Max) @ Id, Vgs :
670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.05nC @ 4.5V, 1.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
30.3pF @ 15V, 43.2pF @ 15V
Pouvwa - Max :
285mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-XFDFN Exposed Pad
Pake Aparèy Founisè :
DFN1010B-6