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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
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  4. Transistors - FETs, MOSFETs - Arrays
  5. ALD114935PAL

Advanced Linear Devices Inc. - ALD114935PAL

KEY Part #: K6521930

ALD114935PAL Pricing (USD) [22107PC Stock]

  • 1 pcs$1.86416
  • 50 pcs$1.10788
Nimewo Pati:
ALD114935PAL
Manifakti:
Advanced Linear Devices Inc.
Detaye deskripsyon:
MOSFET 2N-CH 10.6V 8DIP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Advanced Linear Devices Inc. ALD114935PAL electronic components. ALD114935PAL can be shipped within 24 hours after order. If you have any demands for ALD114935PAL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ALD114935PAL Atribi pwodwi yo

Nimewo Pati : ALD114935PAL
Manifakti : Advanced Linear Devices Inc.
Deskripsyon : MOSFET 2N-CH 10.6V 8DIP
Seri : EPAD®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Matched Pair
Karakteristik FET : Depletion Mode
Drenaj nan Voltage Sous (Vdss) : 10.6V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12mA, 3mA
RD sou (Max) @ Id, Vgs : 540 Ohm @ 0V
Vgs (th) (Max) @ Id : 3.45V @ 1µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 2.5pF @ 5V
Pouvwa - Max : 500mW
Operating Tanperati : 0°C ~ 70°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè : 8-PDIP

Dènye nouvèl

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