Vishay Siliconix - SIA811ADJ-T1-GE3

KEY Part #: K6421300

SIA811ADJ-T1-GE3 Pricing (USD) [431769PC Stock]

  • 1 pcs$0.08567
  • 3,000 pcs$0.08092

Nimewo Pati:
SIA811ADJ-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 20V 4.5A PPAK SC70-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA811ADJ-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIA811ADJ-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 20V 4.5A PPAK SC70-6
Seri : LITTLE FOOT®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 116 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 8V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 345pF @ 10V
Karakteristik FET : Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) : 1.8W (Ta), 6.5W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SC-70-6 Dual
Pake / Ka : PowerPAK® SC-70-6 Dual