Vishay Siliconix - SUD40N10-25-E3

KEY Part #: K6418268

SUD40N10-25-E3 Pricing (USD) [57074PC Stock]

  • 1 pcs$0.68851
  • 2,000 pcs$0.68508

Nimewo Pati:
SUD40N10-25-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 100V 40A TO252.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SUD40N10-25-E3 electronic components. SUD40N10-25-E3 can be shipped within 24 hours after order. If you have any demands for SUD40N10-25-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUD40N10-25-E3 Atribi pwodwi yo

Nimewo Pati : SUD40N10-25-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 100V 40A TO252
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 25 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3W (Ta), 136W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252, (D-Pak)
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63