RQ6C050UNTR Pricing (USD) [615676PC Stock]
- 1 pcs$0.06008
- 3,000 pcs$0.05384
- Nimewo Pati:
- RQ6C050UNTR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 20V 5A TSMT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RQ6C050UNTR electronic components. RQ6C050UNTR can be shipped within 24 hours after order. If you have any demands for RQ6C050UNTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ6C050UNTR Atribi pwodwi yo
Nimewo Pati :
RQ6C050UNTR
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 20V 5A TSMT
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
30 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
900pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.25W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TSMT6 (SC-95)
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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