Rohm Semiconductor - RQ6C050UNTR

KEY Part #: K6416246

RQ6C050UNTR Pricing (USD) [615676PC Stock]

  • 1 pcs$0.06008
  • 3,000 pcs$0.05384

Nimewo Pati:
RQ6C050UNTR
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET N-CH 20V 5A TSMT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor RQ6C050UNTR electronic components. RQ6C050UNTR can be shipped within 24 hours after order. If you have any demands for RQ6C050UNTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RQ6C050UNTR Atribi pwodwi yo

Nimewo Pati : RQ6C050UNTR
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 20V 5A TSMT
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 30 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 4.5V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 900pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.25W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TSMT6 (SC-95)
Pake / Ka : SOT-23-6 Thin, TSOT-23-6

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