IXYS - IXTT140N10P

KEY Part #: K6392637

IXTT140N10P Pricing (USD) [12638PC Stock]

  • 1 pcs$3.58730
  • 10 pcs$3.22857
  • 100 pcs$2.65460
  • 500 pcs$2.22412
  • 1,000 pcs$1.93714

Nimewo Pati:
IXTT140N10P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 100V 140A TO-268.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in IXYS IXTT140N10P electronic components. IXTT140N10P can be shipped within 24 hours after order. If you have any demands for IXTT140N10P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTT140N10P Atribi pwodwi yo

Nimewo Pati : IXTT140N10P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 100V 140A TO-268
Seri : PolarHT™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 140A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V, 15V
RD sou (Max) @ Id, Vgs : 11 mOhm @ 70A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 155nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 600W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-268
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA