Nexperia USA Inc. - PSMN7R0-30MLC,115

KEY Part #: K6415713

PSMN7R0-30MLC,115 Pricing (USD) [347546PC Stock]

  • 1 pcs$0.10696
  • 1,500 pcs$0.10643

Nimewo Pati:
PSMN7R0-30MLC,115
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 30V 67A LFPAK33.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN7R0-30MLC,115 Atribi pwodwi yo

Nimewo Pati : PSMN7R0-30MLC,115
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 30V 67A LFPAK33
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 67A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 7 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.15V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 17.9nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1076pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 57W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK33
Pake / Ka : SOT-1210, 8-LFPAK33