DMP56D0UFB-7 Pricing (USD) [727113PC Stock]
- 1 pcs$0.05087
- 3,000 pcs$0.04620
- Nimewo Pati:
- DMP56D0UFB-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET P-CH 50V 200MA 3DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Transistors - JFETs, Tiristors - SCR, Diodes - Bridge rèktifikateur and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMP56D0UFB-7 electronic components. DMP56D0UFB-7 can be shipped within 24 hours after order. If you have any demands for DMP56D0UFB-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMP56D0UFB-7 Atribi pwodwi yo
Nimewo Pati :
DMP56D0UFB-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET P-CH 50V 200MA 3DFN
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
50V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4V
RD sou (Max) @ Id, Vgs :
6 Ohm @ 100mA, 4V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.58nC @ 4V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
50.54pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
425mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
3-DFN1006 (1.0x0.6)
Pake / Ka :
3-UFDFN
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