TSM2N7000KCT A3G Pricing (USD) [1502592PC Stock]
- 1 pcs$0.02462
- Nimewo Pati:
- TSM2N7000KCT A3G
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET N-CHANNEL 60V 300MA TO92.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM2N7000KCT A3G electronic components. TSM2N7000KCT A3G can be shipped within 24 hours after order. If you have any demands for TSM2N7000KCT A3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM2N7000KCT A3G Atribi pwodwi yo
Nimewo Pati :
TSM2N7000KCT A3G
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CHANNEL 60V 300MA TO92
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
5 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.4nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7.32pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
400mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-92
Pake / Ka :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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