Nimewo Pati :
SI3443BDV-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 20V 3.6A 6-TSOP
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
60 mOhm @ 4.7A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Disipasyon Pouvwa (Max) :
1.1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-TSOP
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6