Vishay Siliconix - SI3443BDV-T1-E3

KEY Part #: K6416278

SI3443BDV-T1-E3 Pricing (USD) [391925PC Stock]

  • 1 pcs$0.09437
  • 3,000 pcs$0.08025

Nimewo Pati:
SI3443BDV-T1-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 20V 3.6A 6-TSOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI3443BDV-T1-E3 electronic components. SI3443BDV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3443BDV-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI3443BDV-T1-E3 Atribi pwodwi yo

Nimewo Pati : SI3443BDV-T1-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 20V 3.6A 6-TSOP
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 60 mOhm @ 4.7A, 4.5V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 9nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.1W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-TSOP
Pake / Ka : SOT-23-6 Thin, TSOT-23-6