Taiwan Semiconductor Corporation - TSM60NB041PW C1G

KEY Part #: K6398941

TSM60NB041PW C1G Pricing (USD) [7621PC Stock]

  • 1 pcs$5.40739

Nimewo Pati:
TSM60NB041PW C1G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
MOSFET N-CHANNEL 600V 78A TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM60NB041PW C1G Atribi pwodwi yo

Nimewo Pati : TSM60NB041PW C1G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : MOSFET N-CHANNEL 600V 78A TO247
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 78A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 41 mOhm @ 21.7A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 139nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 6120pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 446W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247
Pake / Ka : TO-247-3

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