IXYS - IXXH80N65B4H1

KEY Part #: K6423216

IXXH80N65B4H1 Pricing (USD) [10175PC Stock]

  • 1 pcs$4.24394
  • 10 pcs$3.81778
  • 25 pcs$3.47818
  • 100 pcs$3.13889
  • 250 pcs$2.88438
  • 500 pcs$2.62988

Nimewo Pati:
IXXH80N65B4H1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 650V 160A 625W TO247AD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Transistors - JFETs, Diodes - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in IXYS IXXH80N65B4H1 electronic components. IXXH80N65B4H1 can be shipped within 24 hours after order. If you have any demands for IXXH80N65B4H1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXXH80N65B4H1 Atribi pwodwi yo

Nimewo Pati : IXXH80N65B4H1
Manifakti : IXYS
Deskripsyon : IGBT 650V 160A 625W TO247AD
Seri : GenX4™, XPT™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 160A
Kouran - Pèseptè batman (Icm) : 430A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 80A
Pouvwa - Max : 625W
Oblije chanje enèji : 3.77mJ (on), 1.2mJ (off)
Kalite Antre : Standard
Gate chaje : 120nC
Td (on / off) @ 25 ° C : 38ns/120ns
Kondisyon egzamen an : 400V, 80A, 3 Ohm, 15V
Ranvèse Tan Reverse (trr) : 150ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247 (IXXH)