Nimewo Pati :
APTMC120AM55CT1AG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 2N-CH 1200V 55A SP1
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
55A (Tc)
RD sou (Max) @ Id, Vgs :
49 mOhm @ 40A, 20V
Vgs (th) (Max) @ Id :
2.2V @ 2mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs :
98nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
1900pF @ 1000V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP1