Diodes Incorporated - DMP2008UFG-7

KEY Part #: K6421138

DMP2008UFG-7 Pricing (USD) [392732PC Stock]

  • 1 pcs$0.09418
  • 2,000 pcs$0.08429

Nimewo Pati:
DMP2008UFG-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET P-CH 20V 14A POWERDI.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - JFETs and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMP2008UFG-7 Atribi pwodwi yo

Nimewo Pati : DMP2008UFG-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET P-CH 20V 14A POWERDI
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 14A (Ta), 54A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 8 mOhm @ 12A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 72nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 6909pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.4W (Ta), 41W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerDI3333-8
Pake / Ka : 8-PowerWDFN