Diodes Incorporated - DMC3018LSD-13

KEY Part #: K6524258

[3892PC Stock]


    Nimewo Pati:
    DMC3018LSD-13
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET N/P-CH 30V 9.1A/6A 8-SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated DMC3018LSD-13 electronic components. DMC3018LSD-13 can be shipped within 24 hours after order. If you have any demands for DMC3018LSD-13, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    DMC3018LSD-13 Atribi pwodwi yo

    Nimewo Pati : DMC3018LSD-13
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N and P-Channel
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.1A, 6A
    RD sou (Max) @ Id, Vgs : 20 mOhm @ 6.9A, 10V
    Vgs (th) (Max) @ Id : 2.1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 12.4nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 631pF @ 15V
    Pouvwa - Max : 2.5W
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
    Pake Aparèy Founisè : 8-SOP