PHKD3NQ10T,518 Pricing (USD) [4147PC Stock]
- 10,000 pcs$0.23477
- Nimewo Pati:
- PHKD3NQ10T,518
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 100V 3A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PHKD3NQ10T,518 electronic components. PHKD3NQ10T,518 can be shipped within 24 hours after order. If you have any demands for PHKD3NQ10T,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHKD3NQ10T,518 Atribi pwodwi yo
Nimewo Pati :
PHKD3NQ10T,518
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2N-CH 100V 3A 8SOIC
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A
RD sou (Max) @ Id, Vgs :
90 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
633pF @ 20V
Pouvwa - Max :
2W
Operating Tanperati :
-65°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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