Toshiba Semiconductor and Storage - TPC8223-H,LQ(S

KEY Part #: K6525345

TPC8223-H,LQ(S Pricing (USD) [212065PC Stock]

  • 1 pcs$0.19282
  • 2,500 pcs$0.19186

Nimewo Pati:
TPC8223-H,LQ(S
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET 2N-CH 30V 9A 8SOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Diodes - RF ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TPC8223-H,LQ(S electronic components. TPC8223-H,LQ(S can be shipped within 24 hours after order. If you have any demands for TPC8223-H,LQ(S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPC8223-H,LQ(S Atribi pwodwi yo

Nimewo Pati : TPC8223-H,LQ(S
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET 2N-CH 30V 9A 8SOP
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A
RD sou (Max) @ Id, Vgs : 17 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 2.3V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1190pF @ 10V
Pouvwa - Max : 450mW
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOP