Vishay Siliconix - IRFU320PBF

KEY Part #: K6399913

IRFU320PBF Pricing (USD) [67768PC Stock]

  • 1 pcs$0.51844
  • 10 pcs$0.46033
  • 100 pcs$0.34428
  • 500 pcs$0.26699
  • 1,000 pcs$0.21078

Nimewo Pati:
IRFU320PBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 400V 3.1A I-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRFU320PBF electronic components. IRFU320PBF can be shipped within 24 hours after order. If you have any demands for IRFU320PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFU320PBF Atribi pwodwi yo

Nimewo Pati : IRFU320PBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 400V 3.1A I-PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 400V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.8 Ohm @ 1.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 350pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 42W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-251AA
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

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