Vishay Siliconix - SI4966DY-T1-E3

KEY Part #: K6523827

SI4966DY-T1-E3 Pricing (USD) [4035PC Stock]

  • 2,500 pcs$0.33771

Nimewo Pati:
SI4966DY-T1-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2N-CH 20V 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI4966DY-T1-E3 electronic components. SI4966DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4966DY-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4966DY-T1-E3 Atribi pwodwi yo

Nimewo Pati : SI4966DY-T1-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 20V 8SOIC
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
RD sou (Max) @ Id, Vgs : 25 mOhm @ 7.1A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 2W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO