PMPB215ENEAX Pricing (USD) [415964PC Stock]
- 1 pcs$0.08892
- 3,000 pcs$0.07755
- Nimewo Pati:
- PMPB215ENEAX
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 80V 1.9A SOT1220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMPB215ENEAX electronic components. PMPB215ENEAX can be shipped within 24 hours after order. If you have any demands for PMPB215ENEAX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB215ENEAX Atribi pwodwi yo
Nimewo Pati :
PMPB215ENEAX
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 80V 1.9A SOT1220
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
230 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
215pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.6W (Ta), 15.6W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN2020MD-6
Pake / Ka :
6-UDFN Exposed Pad
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