SUP40012EL-GE3 Pricing (USD) [36248PC Stock]
- 1 pcs$1.07870
- Nimewo Pati:
- SUP40012EL-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 40V TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - JFETs, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Tiristors - TRIACs, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SUP40012EL-GE3 electronic components. SUP40012EL-GE3 can be shipped within 24 hours after order. If you have any demands for SUP40012EL-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUP40012EL-GE3 Atribi pwodwi yo
Nimewo Pati :
SUP40012EL-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 40V TO-220
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
150A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.79 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
195nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
10930pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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