Nimewo Pati :
SSM3J56MFV,L3F
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 20V 0.8A VESM
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
800mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.2V, 4.5V
RD sou (Max) @ Id, Vgs :
390 mOhm @ 800mA, 4.5V
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
100pF @ 10V
Disipasyon Pouvwa (Max) :
150mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
VESM