IXTZ550N055T2 Pricing (USD) [3966PC Stock]
- 1 pcs$13.14226
- 20 pcs$13.07687
- Nimewo Pati:
- IXTZ550N055T2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 55V 550A DE475.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTZ550N055T2 electronic components. IXTZ550N055T2 can be shipped within 24 hours after order. If you have any demands for IXTZ550N055T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTZ550N055T2 Atribi pwodwi yo
Nimewo Pati :
IXTZ550N055T2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 55V 550A DE475
Seri :
FRFET®, SupreMOS®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
550A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
595nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
40000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
600W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DE475
Pake / Ka :
DE475
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