BS870Q-7-F Pricing (USD) [1564164PC Stock]
- 1 pcs$0.02365
- Nimewo Pati:
- BS870Q-7-F
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 41V 60V SOT23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Diodes - RF, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated BS870Q-7-F electronic components. BS870Q-7-F can be shipped within 24 hours after order. If you have any demands for BS870Q-7-F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BS870Q-7-F Atribi pwodwi yo
Nimewo Pati :
BS870Q-7-F
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 41V 60V SOT23
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
250mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
5 Ohm @ 200mA, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
50pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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