Infineon Technologies - IPB044N15N5ATMA1

KEY Part #: K6402035

IPB044N15N5ATMA1 Pricing (USD) [22629PC Stock]

  • 1 pcs$1.82131
  • 1,000 pcs$1.67091

Nimewo Pati:
IPB044N15N5ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 150V 174A TO263-7.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPB044N15N5ATMA1 electronic components. IPB044N15N5ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB044N15N5ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB044N15N5ATMA1 Atribi pwodwi yo

Nimewo Pati : IPB044N15N5ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 150V 174A TO263-7
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 174A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 8V, 10V
RD sou (Max) @ Id, Vgs : 4.4 mOhm @ 87A, 10V
Vgs (th) (Max) @ Id : 4.6V @ 264µA
Chaje Gate (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 8000pF @ 75V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO263-7
Pake / Ka : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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