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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FQA8N80C

ON Semiconductor - FQA8N80C

KEY Part #: K6410327

[14174PC Stock]

    Nimewo Pati:
    FQA8N80C
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 800V 8.4A TO-3P.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Tiristors - SCR, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FQA8N80C electronic components. FQA8N80C can be shipped within 24 hours after order. If you have any demands for FQA8N80C, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQA8N80C Atribi pwodwi yo

    Nimewo Pati : FQA8N80C
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 800V 8.4A TO-3P
    Seri : QFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 800V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.4A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.55 Ohm @ 4.2A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 2050pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 220W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-3P
    Pake / Ka : TO-3P-3, SC-65-3

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