IXYS - IXFV20N80PS

KEY Part #: K6408845

[487PC Stock]


    Nimewo Pati:
    IXFV20N80PS
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 800V 20A PLUS220SMD.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in IXYS IXFV20N80PS electronic components. IXFV20N80PS can be shipped within 24 hours after order. If you have any demands for IXFV20N80PS, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXFV20N80PS Atribi pwodwi yo

    Nimewo Pati : IXFV20N80PS
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 800V 20A PLUS220SMD
    Seri : HiPerFET™, PolarHT™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 800V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 520 mOhm @ 10A, 10V
    Vgs (th) (Max) @ Id : 5V @ 4mA
    Chaje Gate (Qg) (Max) @ Vgs : 86nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 4685pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 500W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PLUS-220SMD
    Pake / Ka : PLUS-220SMD