Toshiba Semiconductor and Storage - SSM3K35AMFV,L3F

KEY Part #: K6421713

SSM3K35AMFV,L3F Pricing (USD) [2750629PC Stock]

  • 1 pcs$0.01399
  • 8,000 pcs$0.01392

Nimewo Pati:
SSM3K35AMFV,L3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
SMALL LOW ON RESISTANCE MOSFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Diodes - RF, Tiristors - SCR and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3K35AMFV,L3F Atribi pwodwi yo

Nimewo Pati : SSM3K35AMFV,L3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : SMALL LOW ON RESISTANCE MOSFET
Seri : U-MOSIII
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 250mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.2V, 4.5V
RD sou (Max) @ Id, Vgs : 1.1 Ohm @ 150mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 0.34nC @ 4.5V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 36pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : VESM
Pake / Ka : SOT-723