Nimewo Pati :
BSM180D12P3C007
Manifakti :
Rohm Semiconductor
Deskripsyon :
SIC POWER MODULE
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180A (Tc)
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
5.6V @ 50mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
900pF @ 10V
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Module