ON Semiconductor - NGTB35N60FL2WG

KEY Part #: K6424770

NGTB35N60FL2WG Pricing (USD) [21254PC Stock]

  • 1 pcs$1.93908
  • 270 pcs$0.90961

Nimewo Pati:
NGTB35N60FL2WG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 70A 300W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Transistors - JFETs, Diodes - RF, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NGTB35N60FL2WG electronic components. NGTB35N60FL2WG can be shipped within 24 hours after order. If you have any demands for NGTB35N60FL2WG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTB35N60FL2WG Atribi pwodwi yo

Nimewo Pati : NGTB35N60FL2WG
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 70A 300W TO247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 70A
Kouran - Pèseptè batman (Icm) : 120A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 35A
Pouvwa - Max : 300W
Oblije chanje enèji : 840µJ (on), 280µJ (off)
Kalite Antre : Standard
Gate chaje : 125nC
Td (on / off) @ 25 ° C : 72ns/132ns
Kondisyon egzamen an : 400V, 35A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 68ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247